BUK9575-55A,127 datasheet

О ДАТАШИТЕ

Маркировка

BUK9575-55A,127
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9575-55A,127 Configuration: Single Continuous Drain Current: 20 A Current - Continuous Drain (id) @ 25?° C: 20A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 1950653 Input Capacitance (ciss) @ Vds: 643pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 62W Power Dissipation: 62000 mW Rds On (max) @ Id, Vgs: 68 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.068 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.068 Ohms Fall Time: 33 ns Rise Time: 47 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 28 ns Part # Aliases: BUK9575-55A Other Names: 934056258127, BUK9575-55A
Количество страниц

13 шт.
Форматы файла

HTML, PDF
(Для просмотра требуется Adobe Acrobat Reader)